Herstellung einer 77 GHz Rotman-Linse auf einem hochohmigen Silizium-Wafer im Lift-Off-Verfahren

In this article from the International Journal of Antennas and Propagation, fabrication of a high resistivity silicon based microstrip Rotman lens using a lift-off process is presented. The lens features 3 beam ports, 5 array ports, 16 dummy ports, and beam steering angles of ±10 degrees. The lens was fabricated on a 200 µm thick high resistivity silicon wafer and has a footprint area of 19.7 mm × 15.6 mm. The lens was tested as an integral part of a 77 GHz radar where a tunable X band source along with an 8 times multiplier was used as the RF source and the resulting millimeter wave signal centered at 77 GHz was radiated through a lens-antenna combination. A horn antenna with a downconverter harmonic mixer was used to receive the radiated signal and display the received signal in an Advantest R3271A spectrum analyzer. The superimposed transmit and receive signal in the spectrum analyzer showed the proper radar operation confirming the Rotman lens design.

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Ali Attaran and Sazzadur Chowdhury, “Fabrication of a 77 GHz Rotman Lens on a High Resistivity Silicon Wafer Using Lift-Off Process,” International Journal of Antennas and Propagation, vol. 2014, Article ID 471935, 9 pages, 2014. doi:10.1155/2014/471935